Investigation of excess carrier diffusion in nitride semiconductors with near-field optical microscopy
Identifieur interne : 014355 ( Main/Repository ); précédent : 014354; suivant : 014356Investigation of excess carrier diffusion in nitride semiconductors with near-field optical microscopy
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Abstract
We describe a high-spatial-resolution optical technique to study transport properties in semiconductors, applicable especially to heterostructures characterized by short-carrier diffusion lengths on the 100 nm scale. The method involves spatial near-field optical imaging of photoluminescence profiles created by an interference grating within a total internal reflection configuration. We illustrate the method by applying it as a diagnostic tool to a contemporary problem, namely, to acquire insight into electron-hole pair recombination in InGaN, a blue light-emitting medium exhibiting pronounced nonrandom alloy characteristics. © 1999 American Institute of Physics.
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Nurmikko</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Division of Engineering and Department of Physics, Brown University, Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Rhode Island</region></placeName><wicri:cityArea>Division of Engineering and Department of Physics, Brown University, Providence</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0077014</idno><date when="1999-02-08">1999-02-08</date><idno type="stanalyst">PASCAL 99-0077014 AIP</idno><idno type="RBID">Pascal:99-0077014</idno><idno type="wicri:Area/Main/Corpus">015A59</idno><idno type="wicri:Area/Main/Repository">014355</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Carrier lifetime</term><term>Diffraction gratings</term><term>Electron-hole recombination</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Optical microscopy</term><term>Photoluminescence</term><term>Semiconductor heterojunctions</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7280E</term><term>7340K</term><term>7220J</term><term>7855C</term><term>Etude expérimentale</term><term>Durée vie porteur charge</term><term>Recombinaison électron trou</term><term>Hétérojonction semiconducteur</term><term>Microscopie optique</term><term>Photoluminescence</term><term>Réseau diffraction</term><term>Semiconducteur III-V</term><term>Indium composé</term><term>Gallium composé</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We describe a high-spatial-resolution optical technique to study transport properties in semiconductors, applicable especially to heterostructures characterized by short-carrier diffusion lengths on the 100 nm scale. The method involves spatial near-field optical imaging of photoluminescence profiles created by an interference grating within a total internal reflection configuration. We illustrate the method by applying it as a diagnostic tool to a contemporary problem, namely, to acquire insight into electron-hole pair recombination in InGaN, a blue light-emitting medium exhibiting pronounced nonrandom alloy characteristics. © 1999 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>74</s2></fA05><fA06><s2>6</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Investigation of excess carrier diffusion in nitride semiconductors with near-field optical microscopy</s1></fA08><fA11 i1="01" i2="1"><s1>VERTIKOV (Andrey)</s1></fA11><fA11 i1="02" i2="1"><s1>OZDEN (Ilker)</s1></fA11><fA11 i1="03" i2="1"><s1>NURMIKKO (Arto V.)</s1></fA11><fA14 i1="01"><s1>Division of Engineering and Department of Physics, Brown University, Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>850-852</s1></fA20><fA21><s1>1999-02-08</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 1999 American Institute of Physics. 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